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| SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE "SuperBAT" ISSUE 1 - September 1997 FEATURES: * Low V F * High Current Capability APPLICATIONS: * DC - DC converters * Mobile telecomms * PCMCIA PARTMARK DETAIL: S56 7 1 ZHCS506 C 1 A 3 2 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Continuous Reverse Voltage Forward Current (Continuous) Forward Voltage @ IF = 500mA Average Peak Forward Current; D.C. = 50% Non Repetitive Forward Current t100s t10ms Power Dissipation at Tamb= 25 C Storage Temperature Range Junction Temperature SYMBOL VR IF VF IFAV IFSM Ptot Tstg Tj VALUE 60 500 630 1000 5.5 2.5 330 -55 to + 150 125 UNIT V mA mV mA A A mW C C ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). PARAMETER Reverse Breakdown Voltage Forward Voltage SYMBOL V (BR)R VF MIN. 60 TYP. 80 275 320 415 550 680 820 1120 565 20 20 10 310 360 470 630 800 960 1350 40 MAX. UNIT V mV mV mV mV mV mV mV mV A pF ns CONDITIONS. IR= 200A IF= IF= IF= IF= IF= IF= IF= IF= 50mA* 100mA* 250mA* 500mA* 750mA* 1000mA* 1500mA* 500mA, Tamb= 100 C* Reverse Current Diode Capacitance Reverse Recovery Time IR CD trr V R= 45V f= 1MHz,V R= 25V switched from IF = 500mA to IR = 500mA Measured at IR = 50mA *Measured under pulsed conditions. Pulse width= 300s; duty cycle 2% . ZHCS506 1 10m IF - Forward Current (A) IR - Reverse Current (A) +125C 1m +100C 100m 100u 10u 1u 100n 10n -55C +50C +25C 10m +125C +25C -55C 1m 0 0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 30 40 50 60 VF - Forward Voltage (V) IF v VF VR - Reverse Voltage (V) IR v VR 0.6 0.4 1 IF(av) - Avg Fwd Cur (A) D=t 1/t PF(av) - Avg Pwr Diss (W) DC D=0.5 t p I F(pk) Tj=125C t 0.3 0.4 D=0.2 D=0.1 p I F(av) =DxI PF(av) =I F(av) F(pk) xV F 0.2 t 1 D=t 1/t p 0.2 D=0.05 I F(pk) 0.1 DC D=0.5 D=0.2 D=0.1 D=0.05 t p I F(av) =DxI PF(av) =I F(av) F(pk) 0 75 0 85 95 105 115 125 xV F 0 0.1 0.2 0.3 0.4 0.5 0.6 TC - Case Temperature (C) IF(av) - Avg Fwd Curr (A) IF(av) v TC PF(av) v IF(av) 125 90 Rth=100C/W Rth=200C/W Rth=300C/W CD - Diode Capacitance (pF) Ta - Ambient Temp (C) 50 95 65 1 10 100 0 0 10 20 30 40 50 60 VR - Reverse Voltage (V) Ta v VR VR - Reverse Voltage (V) CD v VR ZHCS506 TYPICAL CHARACTERISTICS 300 D=1 t p 1 D=t 1/t RTHj-a (C/W) 200 D=0.5 t p 100 Single Pulse D=0.2 D=0.1 D=0.05 0 100u 1m 10m 100m 1 10 100 Pulse Width (s) |
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